Freezing edge know-how: A brand new plasma-based etching course of might result in denser information storage in telephones, cameras, and computer systems. Researchers have developed a hydrogen fluoride plasma approach that doubles the etching charge within the manufacturing strategy of 3D NAND flash reminiscence chips.
Customary NAND flash storage is utilized in microSD playing cards, USB drives, and solid-state drives in computer systems and telephones. To suit extra gigabytes into smaller areas, producers have begun stacking reminiscence cells vertically in a course of known as 3D NAND.
Developments in 3D NAND have pushed chip designs past 200 layers, with firms like Micron, SK Hynix, and Samsung already eyeing 400-layer know-how to extend storage density. Nonetheless, increased layer counts additionally deliver better manufacturing complexity. One significantly demanding course of is etching, which requires meticulously carving exact holes, layer by layer, by way of alternating silicon oxide and silicon nitride layers.
Researchers from Lam Analysis, the College of Colorado Boulder, and the Princeton Plasma Physics Laboratory (PPPL) have developed a brand new approach to streamline the method. It makes use of cryogenic (low-temperature) hydrogen fluoride plasma to etch the holes. In experiments, the etch charge greater than doubled, growing from 310 nanometers per minute with the outdated technique to 640 nm/min with their method. In addition they discovered that the etched holes have been cleaner.
Seeing advantages, the researchers experimented with including a couple of different components to the hydrogen fluoride plasma recipe. Phosphorus trifluoride acted as a nitrous increase for silicon dioxide etching, quadrupling the speed. In addition they examined ammonium fluorosilicate. The staff detailed its findings in a examine printed within the Journal of Vacuum Science & Expertise.
Seeing advantages, the researchers explored including a couple of different components to this hydrogen fluoride plasma recipe. Phosphorus trifluoride acted as a nitrous increase for the silicon dioxide etching, quadrupling that charge. In addition they examined out ammonium fluorosilicate. The total findings may be discovered within the examine printed within the Journal of Vacuum Science & Expertise.
Whereas some challenges stay, the brand new approach might overcome a big manufacturing hurdle. Igor Kaganovich, a principal analysis physicist at PPPL, identified that growing reminiscence density can be essential as information calls for develop with AI adoption.
It is too early to say if it will end in cheaper or denser NAND chips for customers. The approach nonetheless must be confirmed commercially viable and scaled for mass manufacturing. Even when producers undertake the method, there is no assure that any value financial savings will trickle all the way down to customers.
